Space charge effect and mirror charge effect in photoemission spectroscopy
نویسندگان
چکیده
منابع مشابه
Space-charge-effect-induced large magnetoresistance in silicon
We report that silicon shows large positive magnetoresistance (MR) between 0 and 3 T more than 1,000 per cent at 300 K and 3,000 per cent at 25 K. The experiment on lightly doped silicon reveals that when the carrier density decreases below 10 cm the MR becomes pronounced due to the space-charge effect. We propose that the quasi-neutrality breaking of the space-charge effect can introduce elect...
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ژورنال
عنوان ژورنال: Journal of Electron Spectroscopy and Related Phenomena
سال: 2005
ISSN: 0368-2048
DOI: 10.1016/j.elspec.2004.08.004